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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1763
SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The PA1763 is N-Channel MOS Field Effect Transistor designed for DC/DC Converters.
PACKAGE DRAWING (Unit : mm)
8 5 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 6.0 0.3 4.4
+0.10 -0.05
FEATURES
* Dual chip type * Low on-resistance RDS(on)1 = 47.0 m MAX. (VGS = 10 V, ID = 2.3 A) RDS(on)2 = 57.0 m MAX. (VGS = 4.5 V, ID = 2.3 A) RDS(on)3 = 66.0 m MAX. (VGS = 4.0 V, ID = 2.3 A) * Low input capacitance Ciss = 870 pF TYP. * Built-in G-S protection diode * Small and surface mount package (Power SOP8)
1
4 5.37 MAX.
1.44
0.8
1.8 MAX.
0.15
0.05 MIN.
0.5 0.2 0.10
1.27 0.78 MAX. 0.40
+0.10 -0.05
0.12 M
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
PA1763G
ABSOLUTE MAXIMUM RATINGS (TA = 25 C, All terminals are connected.)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
Note1 Note2 Note2
VDSS VGSS ID(DC) ID(pulse) PT PT IAS EAS Tch Tstg
60 20 4.5 18 1.7 2.0 4.5 60 150 -55 to + 150
V V A A W W A mJ C C
Gate Protection Diode Source Gate Body Diode
EQUIVALENT CIRCUIT (1/2 Circuit)
Drain
Total Power Dissipation (1 unit) Total Power Dissipation (2 unit) Single Avalanche Current Single Avalanche Energy Channel Temperature Storage Temperature
Note3 Note3
Notes 1. PW 10 s, Duty cycle 1 % 2 2. TA = 25 C, Mounted on ceramic substrate of 1200 mm x 2.2 mm 3. Starting Tch = 25 C, RG = 25 , VGS = 20 V 0 V Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage Exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G14056EJ2V0DS00 (2nd edition) Date Published April 2001 NS CP(K) Printed in Japan
The mark ! shows major revised points.
(c)
1999, 2000
PA1763
ELECTRICAL CHARACTERISTICS (TA = 25 C, All terminals are connected.)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 10 V, ID = 2.3 A VGS = 4.5 V, ID = 2.3 A VGS = 4.0 V, ID = 2.3 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 2.3 A VDS = 60 V, VGS = 0 V VGS = 16 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 2.3 A VGS(on) = 10 V VDD = 30 V RG = 10 ID = 4.5 A VDD = 48 V VGS = 10 V IF = 4.5 A, VGS = 0 V IF = 4.5 A, VGS = 0 V di/dt = 100 A/s 870 150 80 11 40 50 12 20 3 5 0.80 30 40 1.5 3.0 MIN. TYP. 37.0 45.0 49.0 2.0 6.0 10 10 MAX. 47.0 57.0 66.0 2.5 UNIT m m m V S
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG RG = 10
VGS RL VDD ID
90 % 90 % ID
VGS
Wave Form
0
10 %
VGS(on)
90 %
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1 %
ID
Wave Form
0
10 % td(on) ton tr td(off) toff
10 % tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet G14056EJ2V0DS
PA1763
TYPICAL CHARACTERISTICS (TA = 25C, All terminals are connected.)
FORWARD TRANSFER CHARACTERISTICS 100 Pulsed VDS = 10 V 30 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed
ID - Drain Current - A
10
ID - Drain Current - A
TA = 150 C 1 TA = 75 C TA = 25 C 0.1 0.01 TA = -25 C
25 20 15 10 5 VGS = 4.0 V VGS = 10 V VGS = 4.5 V
0.001
0 0.5
1
1.5
2
2.5 3
3.5 4
4.5
5
0 0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
|yfs| - Forward Transfer Admittance - S
100
VDS = 10 V Pulsed TA = -25 C
RDS(on) - Drain to Source On-state Resistance - m
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 200 Pulsed 180 160 140 120 100 80 60 40 20 0 0 5 ID = 2.3 A 10 15 ID = 4.5 A
10
TA = 25 C TA = 75 C
1
TA = 150 C
0.1 0.1
1
10
100
ID - Drain Current - A
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On - state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
VGS(off) - Gate to Source Cut-off Voltage - V
120 100 VGS = 4.0 V 80 60 40 20 0 0.1
Pulsed
3 2.5 2 1.5 1 0.5 0 - 75 - 50 - 25
VDS =10 V ID = 1 mA
VGS = 4.5 V VGS = 10 V
1
10
ID = 2.3 A 100
0
25
50
75 100 125 150 175
ID - Drain Current - A
Tch - Channel Temperature - C
Data Sheet G14056EJ2V0DS
3
PA1763
RDS(on) - Drain to Source On-state Resistance - m
IF - Diode Forward Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 Pulsed VGS = 4.0 V 90 80 VGS = 4.5 V 70 60 50 40 30 20 10 - 50 - 25 0 ID = 2.3 A 25 50 75 100 125 150 175 200 VGS = 10 V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 VGS = 10 V 10 VGS = 0 V Pulsed
1
0.1
0.01 0.00
0.50
1.00
1.50
Tch - Channel Temperature - C
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 1000 VGS = 0 V f = 1 MHz 1000 Ciss
SWITCHING CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
tr 100 tf
VDS = 30 V VGS = 10 V RG = 10 td(off) td(on)
100
Coss
10
Crss 10
1
1 0.1
1
10
100
0.1 0.1
1
10
100
VDS - Drain to Source Voltage - V
ID - Drain Current - A
REVERSE RECOVERY TIME vs. DRAIN CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns
di/dt = 100 A/s VGS = 0 V 1000
ID = 6.0 A
10 VDD = 48 V VDD = 30 V VDD = 12 V 8 VGS 6 4 2 VDS 2 4 6 8 10 12 14 16 18 20 0
100
35.0 30.0 25.0 20.0 15.0 10.0 5.0 0 0
10
1 0.1
1
10
100
ID - Drain Current - A
QG - Gate Charge - nC
4
Data Sheet G14056EJ2V0DS
VGS - Gate to Source Voltage - V
10000
60.0 55.0 50.0 45.0 40.0
12
PA1763
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
PT - Total Power Dissipation - W/package
2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 20 40 60 80 2 unit 1 unit
dT - Percentage of Rated Power - %
100 80 60 40 20
Mounted on ceramic substrate 2of 1200 mm x 2.2 mm
0
20
40
60
80
100 120 140 160
100 120 140 160
TA - Ambient Temperature - C
TA - Ambient Temperature - C
!
100
FORWARD BIAS SAFE OPERATING AREA
RDS(on) Limited (VGS = 10 V)
ID(pulse)
ID - Drain Current - A
Mounted on ceramic substrate of 1200mm2 x 2.2 mm, 1 unit
10
PW
=1
ID(DC)
Po we r
PW
PW =1
PW
=1
00
=1
0m
ms
s
1
Di
00
s
ss
ipa
ms
tio
nL
0.1
TA = 25 C Single Pulse
im
ite
d
0.01 0.1
1
10
100
VDS - Drain to Source Voltage - V
!
rth(t) - Transient Thermal Resistance - C/W
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 73.5C/W 100
10
1
0.1
Mounted on ceramic substrate of 1200mm2 x 2.2 mm Single Pulse, 1 unit
0.01 100
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet G14056EJ2V0DS
5
PA1763
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100
SINGLE AVALANCHE ENERGY DERATING FACTOR 120 RG = 25 VDD = 30 V VGS = 20 V IAS 4.5 A
IAS - Single Avalanche Current - A
Energy Derating Factor - %
RG = 25 VDD = 30 V VGS = 20 V 0 V Starting Tch = 25 C
100 80 60 40 20 0 25
0V
10 IAS = 4.5 A EAS = 60 mJ
1 10
100
1m
10m
50
75
100
125
150
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - C
6
Data Sheet G14056EJ2V0DS
PA1763
[MEMO]
Data Sheet G14056EJ2V0DS
7
PA1763
* The information in this document is current as of April, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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